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SPD28N05L SPU28N05L
SIPMOS (R) Power Transistor
* N channel * Enhancement mode * Logic Level * Avalanche-rated * dv/dt rated * 175C operating temperature
Pin 1 Pin 2 Pin 3
G
D
S
Type
VDS 55 V 55 V
ID 28 A 28 A
RDS(on) 0.05 0.05
Package
Ordering Code
SPD28N05L SPU28N05L
P-TO252 P-TO251
Q67040 - S4122 - A2 Q67040 - S4114 - A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
TC = 25 C TC = 100 C
ID
A 28 20
Pulsed drain current
TC = 25 C
IDpuls
112
EAS
Avalanche energy, single pulse
ID = 28 A, V DD = 25 V, RGS = 25 L = 357 H, Tj = 25 C
mJ
140
IAR EAR
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt
IS = 30 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C
28 7.5
A mJ kV/s
dv/dt
6
VGS Ptot
Gate source voltage Power dissipation
TC = 25 C
14
75
V W
Semiconductor Group
1
30/Jan/1998
SPD28N05L SPU28N05L
Maximum Ratings Parameter Symbol Values Unit
Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient (PCB mount)** Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA RthJA
-55 ... + 175 -55 ... + 175
C
2 50 100
55 / 175 / 56
K/W
** when mounted on 1 " square PCB ( FR4 );for recommended footprint
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit
Drain- source breakdown voltage
V GS = 0 V, ID = 0.25 mA, Tj = 25 C
V (BR)DSS
V 55 -
Gate threshold voltage
V GS=V DS, ID = 50 A
V GS(th)
1.2
IDSS
1.6
2 A
Zero gate voltage drain current
V DS = 50 V, V GS = 0 V, Tj = -40 C V DS = 50 V, V GS = 0 V, Tj = 25 C V DS = 50 V, V GS = 0 V, Tj = 150 C
IGSS
0.1 -
0.1 1 100 nA
Gate-source leakage current
V GS = 20 V, VDS = 0 V
RDS(on)
10
100
Drain-Source on-resistance
V GS = 4.5 V, ID = 20 A V GS = 10 V, ID = 20 A
0.04 0.025 0.05 0.03
Semiconductor Group
2
30/Jan/1998
SPD28N05L SPU28N05L
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit
Transconductance
V DS 2 * ID * RDS(on)max, ID = 20 A
gfs
S 10 20 pF 770 960
Input capacitance
V GS = 0 V, V DS = 25 V, f = 1 MHz
Ciss
Output capacitance
V GS = 0 V, V DS = 25 V, f = 1 MHz
Coss
Crss
230
300
Reverse transfer capacitance
V GS = 0 V, V DS = 25 V, f = 1 MHz
td(on)
130
165 ns
Turn-on delay time
V DD = 30 V, VGS = 4.5 V, ID = 28 A RG = 6.8
tr
10
15
Rise time
V DD = 30 V, VGS = 4.5 V, ID = 28 A RG = 6.8
td(off)
75
115
Turn-off delay time
V DD = 30 V, VGS = 4.5 V, ID = 28 A RG = 6.8
tf
30
45
Fall time
V DD = 30 V, VGS = 4.5 V, ID = 28 A RG = 6.8
Qg(th)
20
30 nC
Gate charge at threshold
V DD = 40 V, ID 0.1 A, V GS =0 to 1 V
Qg(5)
1
1.5
Gate charge at 5.0 V
V DD = 40 V, ID = 28 A, VGS =0 to 5 V
Qg(total)
20
30
Gate charge total
V DD = 40 V, ID = 28 A, VGS =0 to 10 V
V (plateau)
32
50 V
Gate plateau voltage
V DD = 40 V, ID = 28 A
-
4
-
Semiconductor Group
3
30/Jan/1998
SPD28N05L SPU28N05L
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit
Inverse diode continuous forward current
TC = 25 C
IS
A 28
Inverse diode direct current,pulsed
TC = 25 C
ISM
V SD
-
112 V
Inverse diode forward voltage
V GS = 0 V, IF = 56 A
trr
1.1
1.8 ns
Reverse recovery time
V R = 30 V, IF=lS, diF/dt = 100 A/s
Qrr
60
90 C
Reverse recovery charge
V R = 30 V, IF=lS, diF/dt = 100 A/s
-
0.15
0.25
Semiconductor Group
4
30/Jan/1998
SPD28N05L SPU28N05L
Power dissipation Ptot = (TC)
Drain current ID = (TC) parameter: VGS 4 V
30 A
80
W Ptot ID
26 24 22 20
60
50
18 16 14
40
30
12 10
20
8 6
10 0 0
4 2 0 20 40 60 80 100 120 140 C 180 0 20 40 60 80 100 120 140 C 180
TC
TC
Safe operating area ID = (VDS) parameter: D = 0, TC = 25C
10 3
Transient thermal impedance Zth JC = (tp) parameter: D = tp / T
10 1 K/W
A ID
t = 15.0s p
ZthJC 10 2
V
DS
10 0
/I
D
10 -1
DS (o n)
=
100 s
D = 0.50 10 -2 0.20 0.10 0.05
10 1
1 ms
R
10
10 ms
-3
0.02 single pulse 0.01
10 0 0 10
DC 10
1
V 10
2
10 -4 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
VDS
tp
Semiconductor Group
5
30/Jan/1998
SPD28N05L SPU28N05L
Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C
65 A 55 ID 50 45 40 35 30 25 20 15 10 5
a 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 b c e
Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C
0.16
Ptot = 75W
l kj ih g
VGS [V] a 2.5
RDS (on) 0.12
a
b
c
d
e
fb
c d e f g
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0
0.10
0.08
dh
i j k l
0.06
f hi j g k
0.04
0.02 VGS [V] =
a 2.5 3.0 b 3.5 c 4.0 d 4.5 f e 5.0 5.5 g 6.0 h i 6.5 7.0 j 8.0 k 10.0
V
5.0
0.00 0
10
20
30
40
A
55
VDS
ID
Typ. transfer characteristics ID = f (V GS)
parameter: tp = 80 s
VDS2 x ID x RDS(on)max
60 A 50
I
D
45 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 V
VGS
10
Semiconductor Group
6
30/Jan/1998
SPD28N05L SPU28N05L
Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 20 A, VGS = 4.5 V
0.16
Gate threshold voltage
V GS(th)= f (Tj)
parameter:VGS=VDS,ID = 50A
3.0 V 2.6
VGS(th)
RDS (on) 0.12
2.4 2.2 2.0
0.10
1.8 1.6 98% 1.4 1.2 1.0
max
0.08
0.06
typ
0.04
0.8 0.6
0.02 0.00 -60 -20 20 60 100 C 180
0.4 0.2 0.0 -60 -20 20 60 100 140 V
Tj
typ
min
200
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS = 0V, f = 1MHz
10 4
Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s
10 3
A
C
pF
IF 10 2
10 3
Ciss
10 1 Tj = 25 C typ Tj = 175 C typ
Coss
Tj = 25 C (98%) Tj = 175 C (98%)
10 2 0
Crss
5
10
15
20
25
30
V
VDS
40
10 0 0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
Semiconductor Group
7
30/Jan/1998
SPD28N05L SPU28N05L
Typ. gate charge VGS = (QGate) parameter: ID puls = 28 A
16
V VGS
12
10
8 0,2 VDS max 6 0,8 VDS max
4
2 0 0 5 10 15 20 25 30 35 40 nC 50
Q Gate
Drain-source breakdown voltage V(BR)DSS = (Tj)
65
V V(BR)DSS
61
59
57
55
53
51 49 -60
-20
20
60
100
C
180
Tj
Semiconductor Group
8
30/Jan/1998

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